TY - MGZN T1 - A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers T3 - Journal of Applied Physics 110.5 (2011): 06.11.2012 A1 - Murakami,Katsuhisa A1 - Rommel,Mathias A1 - Yanev,Vasil A1 - Erlbacher,Tobias A1 - Bauer,Anton J. A1 - Frey,Lothar Y1 - 2012/11/07 N2 - Current conduction mechanisms through a metal-oxide semiconductor capacitor with a 9.6 nm thick SiO2 dielectric layer are characterized via Fowler-Nordheim (FN) and Poole-Frenkel (PF) plots, as well as through the analysis of the power exponent parameter ??=?d(log?I)/d(log?V). It is shown that the evaluation by means of ? is much more sensitive in the accurate identification of different current conduction mechanisms. If FN tunneling and PF conduction occur simultaneously, evaluation using the ?-voltage (?-V) plot actually allows one to determine the fraction of each conduction mechanism quantitatively. Even a slight current saturation due to minority carrier depletion, which cannot be detected through the evaluation of the current-voltage characteristics using FN or PF plots, can be detected by the ?-V plot. KW - - CY - Erlangen PB - Universitätsbibliothek der Universität Erlangen-Nürnberg AD - Universitätsstraße. 4, 91054 Erlangen L2 - http://www.opus.ub.uni-erlangen.de/opus/volltexte/2012/3794 ER -