TY  - MGZN
T1  - 1550?nm ErAs:In(Al)GaAs large area photoconductive emitters
T3  - Applied Physics Letters 101.10 (2012): 07.11.2012 <http://apl.aip.org/resource/1/applab/v101/i10/p101105_s1>
A1  - Preu,Sascha
A1  - Mittendorff,M.
A1  - Lu,H.
A1  - Weber,Heiko B.
A1  - Winnerl,S.
A1  - Gossard,A. C.
Y1  - 2012/11/08
N2  - We report on high power terahertz (THz) emission from ErAs-enhanced In0.52Al0.48As-In0.53Ga0.47As superlattices for operation at 1550?nm. ErAs clusters act as efficient recombination centers. The optical power is distributed among a large, microstructured area in order to reduce the local optical intensity. A THz field strength of 0.7?V/cm (1?V/cm peak-to-peak) at 100 mW average optical power has been obtained, with emission up to about 4 THz in air, limited by the detection crystal used in the system.
KW  - -
CY  - Erlangen
PB  - Universitätsbibliothek der Universität Erlangen-Nürnberg
AD  - Universitätsstraße. 4, 91054 Erlangen
L2  - http://www.opus.ub.uni-erlangen.de/opus/volltexte/2012/3842
ER  -