TY - MGZN T1 - Modeling boron profiles in silicon after pulsed excimer laser annealing T3 - AIP Conference Proceedings 1496 (2012): S. 241-244. 16.11.2012 A1 - Hackenberg,Moritz A1 - Huet,K. A1 - Negru,R A1 - Venturini,J. A1 - Fisicaro,G. A1 - Magna,A. la A1 - Pichler,Peter Y1 - 2012/11/16 N2 - In this work, we investigated four possible mechanisms which were candidates to explain the shape of boron profiles after ion implantation and melting excimer laser annealing in silicon. A laser with a wavelength of 308 nm and a pulse duration of ?180 ns was used. To simulate this process, an existing model for the temperature and phase evolution was complemented with equations for the migration of dopants. Outdiffusion, thermodiffusion, segregation, and adsorption were investigated as possible mechanisms. As a result, we found that outdiffusion and segregation can be excluded as major mechanisms. Thermodiffusion as well as adsorption could both reproduce the build-up at low melt depths, but only adsorption the one at deeper melt depths. In both cases, ion beam mixing during SIMS measurement had to be taken into account to reproduce the measured profiles. KW - - CY - Erlangen PB - Universitätsbibliothek der Universität Erlangen-Nürnberg AD - Universitätsstraße. 4, 91054 Erlangen L2 - http://www.opus.ub.uni-erlangen.de/opus/volltexte/2012/3890 ER -