TY - MGZN T1 - Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium T3 - AIP Conference Proceedings 1496 (2012): S. 276-279. 16.11.2012 A1 - Maier,Reinhard A1 - Häublein,Volker A1 - Ryssel,Heiner A1 - Völlm,Henning A1 - Feili,Dara A1 - Seidel,Helmut A1 - Frey,Lothar Y1 - 2012/11/16 N2 - The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate. KW - - CY - Erlangen PB - Universitätsbibliothek der Universität Erlangen-Nürnberg AD - Universitätsstraße. 4, 91054 Erlangen L2 - http://www.opus.ub.uni-erlangen.de/opus/volltexte/2012/3892 ER -