Hinweis zum Urheberrecht
Aufsatz zugänglich unter
URN: urn:nbn:de:bvb:29-opus-37944
URL: http://www.opus.ub.uni-erlangen.de/opus/volltexte/2012/3794/
A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers
Murakami, Katsuhisa ;
Rommel, Mathias ;
Yanev, Vasil ;
Erlbacher, Tobias ;
Bauer, Anton J. ;
Frey, Lothar
| Originalveröffentlichung: |
| (2011) Journal of Applied Physics 110.5 (2011): 06.11.2012 <http://jap.aip.org/resource/1/japiau/v110/i5/p054104_s1> |
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| SWD-Schlagwörter: |
| - |
| Freie Schlagwörter (Englisch): |
| minority carriers , MOS capacitors , Poole-Frenkel effect , silicon compounds , tunnelling |
| PACS - Klassifikation: |
| 84.32.Tt |
| Collection: |
| Universität Erlangen-Nürnberg / Allianzlizenzen / 2011 |
| Fakultät: |
| Technische Fakultät |
| DDC-Sachgruppe: |
| Technik |
| Dokumentart: |
| Aufsatz |
| Sprache: |
| Englisch |
| Erstellungsjahr: |
| 2011 |
| Publikationsdatum: |
| 07.11.2012 |
| Kurzfassung in Englisch: |
| Current conduction mechanisms through a metal-oxide semiconductor capacitor with a 9.6 nm thick SiO2 dielectric layer are characterized via Fowler-Nordheim (FN) and Poole-Frenkel (PF) plots, as well as through the analysis of the power exponent parameter α = d(log I)/d(log V). It is shown that the evaluation by means of α is much more sensitive in the accurate identification of different current conduction mechanisms. If FN tunneling and PF conduction occur simultaneously, evaluation using the α-voltage (α-V) plot actually allows one to determine the fraction of each conduction mechanism quantitatively. Even a slight current saturation due to minority carrier depletion, which cannot be detected through the evaluation of the current-voltage characteristics using FN or PF plots, can be detected by the α-V plot. |