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Aufsatz zugänglich unter
URN: urn:nbn:de:bvb:29-opus-38138
URL: http://www.opus.ub.uni-erlangen.de/opus/volltexte/2012/3813/
Investigation of proximity effects in electron microscopy and lithography
Walz, Marie-Madeleine ;
Vollnhals, Florian ;
Rietzler, Florian ;
Schirmer, Matthias ;
Steinrück, Hans-Peter ;
Marbach, Hubertus
| Originalveröffentlichung: |
| (2012) Applied Physics Letters 100.5 (2012): 06.11.2012 <http://apl.aip.org/resource/1/applab/v100/i5/p053118_s1> |
| pdf-Format:
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| SWD-Schlagwörter: |
| - |
| Freie Schlagwörter (Englisch): |
| electron beams , electron emission , membranes , proximity effect (lithography) , scanning electron microscopy |
| PACS - Klassifikation: |
| 07.78.+s , 68.37.Hk |
| Collection: |
| Universität Erlangen-Nürnberg / Allianzlizenzen / 2012 |
| Fakultät: |
| Naturwissenschaftliche Fakultät |
| DDC-Sachgruppe: |
| Chemie |
| Dokumentart: |
| Aufsatz |
| Sprache: |
| Englisch |
| Erstellungsjahr: |
| 2012 |
| Publikationsdatum: |
| 07.11.2012 |
| Kurzfassung in Englisch: |
| A fundamental challenge in lithographic and microscopic techniques employing focused electron beams are so-called proximity effects due to unintended electron emission and scattering in the sample. Herein, we apply a method that allows for visualizing electron induced surface modifications on a SiN substrate covered with a thin native oxide layer by means of iron deposits. Conventional wisdom holds that by using thin membranes proximity effects can be effectively reduced. We demonstrate that, contrary to the expectation, these can be indeed larger on a 200 nm SiN-membrane than on the respective bulk substrate due to charging effects. |
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