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Aufsatz zugänglich unter
URN: urn:nbn:de:bvb:29-opus-38281
URL: http://www.opus.ub.uni-erlangen.de/opus/volltexte/2012/3828/
Detection of nanosecond-scale, high power THz pulses with a field effect transistor
Preu, Sascha ;
Lu, H. ;
Sherwin, M. S. ;
Gossard, A. C.
| Originalveröffentlichung: |
| (2012) Review of Scientific Instruments 83.5 (2012): 07.11.2012 <http://rsi.aip.org/resource/1/rsinak/v83/i5/p053101_s1> |
| pdf-Format:
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| SWD-Schlagwörter: |
| - |
| Freie Schlagwörter (Englisch): |
| field effect transistors , free electron lasers , optical pulse generation , Schottky diodes , terahertz wave spectra |
| PACS - Klassifikation: |
| 41.60.Cr , 42.60.-v |
| Collection: |
| Universität Erlangen-Nürnberg / Allianzlizenzen / 2012 |
| Fakultät: |
| Naturwissenschaftliche Fakultät |
| DDC-Sachgruppe: |
| Naturwissenschaften |
| Dokumentart: |
| Aufsatz |
| Sprache: |
| Englisch |
| Erstellungsjahr: |
| 2012 |
| Publikationsdatum: |
| 08.11.2012 |
| Kurzfassung in Englisch: |
| We demonstrate detection and resolution of high power, 34 ns free electron laser pulses using a rectifying field effect transistor. The detector remains linear up to an input power of 11 ± 0.5 W at a pulse energy of 20 ± 1 μJ at 240 GHz. We compare its performance to a protected Schottky diode, finding a shorter intrinsic time constant. The damage threshold is estimated to be a few 100 W. The detector is, therefore, well-suited for characterizing high power THz pulses. We further demonstrate that the same detector can be used to detect low power continuous-wave THz signals with a post detection limited noise floor of 3.1 μW/math. Such ultrafast, high power detectors are important tools for high power and high energy THz facilities such as free electron lasers. |
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