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Aufsatz zugänglich unter
URN: urn:nbn:de:bvb:29-opus-38901
URL: http://www.opus.ub.uni-erlangen.de/opus/volltexte/2012/3890/
Modeling boron profiles in silicon after pulsed excimer laser annealing
Hackenberg, Moritz ;
Huet, K. ;
Negru, R ;
Venturini, J. ;
Fisicaro, G. ;
Magna, A. la ;
Pichler, Peter
| Originalveröffentlichung: |
| (2012) AIP Conference Proceedings 1496 (2012): S. 241-244. 16.11.2012 <http://proceedings.aip.org/resource/2/apcpcs/1496/1/241_1> |
| pdf-Format:
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| SWD-Schlagwörter: |
| - |
| Freie Schlagwörter (Englisch): |
| adsorption , boron , doping profiles , elemental semiconductors , excimer lasers |
| Collection: |
| Universität Erlangen-Nürnberg / Allianzlizenzen / 2012 |
| Fakultät: |
| Technische Fakultät |
| DDC-Sachgruppe: |
| Technik |
| Dokumentart: |
| Aufsatz |
| Sprache: |
| Englisch |
| Erstellungsjahr: |
| 2012 |
| Publikationsdatum: |
| 16.11.2012 |
| Kurzfassung in Englisch: |
| In this work, we investigated four possible mechanisms which were candidates to explain the shape of boron profiles after ion implantation and melting excimer laser annealing in silicon. A laser with a wavelength of 308 nm and a pulse duration of ∼180 ns was used. To simulate this process, an existing model for the temperature and phase evolution was complemented with equations for the migration of dopants. Outdiffusion, thermodiffusion, segregation, and adsorption were investigated as possible mechanisms. As a result, we found that outdiffusion and segregation can be excluded as major mechanisms. Thermodiffusion as well as adsorption could both reproduce the build-up at low melt depths, but only adsorption the one at deeper melt depths. In both cases, ion beam mixing during SIMS measurement had to be taken into account to reproduce the measured profiles. |
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